男，汉族，1992年2月生，山西太原人，中共党员，博士，硕士生导师，讲师，《山东科技大学学报（自然科学版》青年编委。每年招收2-3名电子、物理等相关专业研究生。
学习经历：
2021.9-2024.6 中国科学院微电子研究所 高频高压中心 微电子学与固体电子学专业学习，获工学博士学位
2015.9-2018.3 北京理工大学 物理学院静电实验室 物理学专业学习，获理学硕士学位
工作经历：
2024.9-至今 山东科技大学 电子信息工程学院 集成电路系教师
2018.3-2021.7 中国电子科技集团第四十一研究所 研发三部/共性技术研究部 工程师
研究方向及成果：
主要从事射频微波器件与电路集成技术、III-V 族化合物半导体器件高频建模、毫米波及太赫兹超宽带噪声源、强电磁防护与电磁兼容等领域研究。在微电子、射频微波领域国际知名期刊、会议发表高水平论文20余篇(包括IEEE TMTT、IMS、TED、MWTL等论文9篇)，2024年在美国华盛顿受邀参加微波电路领域顶级会议IEEE IMS上做学术报告，授权国家发明专利5项；主持国家自然科学基金、山东省自然科学基金各1项，横向课题2项；作为骨干参与国家自然科学基金、国家重点研发计划、国家核高基项目、1xx重点项目近10项。
部分代表性论文：
[1] R. Zhao, D. Lu, X. Kang W. Wang, L. Wang, S. Wu, X. Tan, Y. Ye, Y. Kong, B. Jiao and X. Liu, “Limiter performance improvement through thermal management of GaN SBD combined microjet cooling with optimized substrate”, IEEE Transactions on Electron Devices, vol. 72, no. 4, pp. 1912-1918, Feb. 2025.
[2] R. Zhao, X. Kang, Y. Zheng, H. Wu, J. Gao, K. Wei and X. Liu., " Recovery Performance and Design Method for High-Power Microwave Limiter Using GaN-SBD Technology," IEEE Transactions on Microwave Theory and Techniques, 2023, doi 10.1109/TMTT.2024.3360246.
[3] X. Tan, Z. Ma, Y. Zhang and R. Zhao*. "A Compact Multifunctional Reconfigurable Coupler With Quadrature and Rat-Race Functions," IEEE Transactions on Microwave Theory and Techniques, 2024, doi:10.1109/TMTT.2024.3514149. (通讯作者).
[4] R. Zhao, et al., " Record Fast Recovery Performance from Microwave High-Power Limiters with All-GaN SBD-MMIC Technology: 39ns@100W," IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 434-437, doi: 10.1109/IMS40175.2024.10600444.
[5] R. Zhao, X. Kang, Y. Ying, H. Wu, N. Wei, S. Deng, K. Wei and X. Liu, " High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diode," IEEE Microwave and Wireless Technology Letters, vol. 3, pp. 208-211, 2022.
[6] R. Zhao, X. Kang, Y. Zheng, H. Wu, S. Deng, K. Wei and X. Liu, " High Power GaN SBD Limiter for Sub-6G with Fast Response and Recovery," IEEE Microwave and Wireless Technology Letters, vol. 34, no. 1, pp. 57-60, Jan. 2024.
[7] H. Wu, X. Kang, Y. Zheng, K. Wei. R.Zhao, et al., "Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer, " IEEE Transactions on Electron Devices, 2023, 70, 2, 402-408.
[8] G. Zhang, X. Kang, Y. Zheng, H. Wu. R.Zhao, "Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design," IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7350-7357, Dec. 2024.
[9] S. Li, X. Xu, X. Kang, Y. Zhen, R. Zhao, et al., “High-Efficiency and High-Power Rectifiers Using Cost-effective AlGaN/GaN Schottky Diode with Accurate Large-Signal Parameter Extraction,” IEEE Microwave and Wireless Technology Letters. Jan. 2024.
[10] Zhao R, Z. Zhang, Y. Zhang, S. Zhang, X. Duan and Y. Li, "Design and Implementation of 50GHz-110GHz Ultra-Broadband Noise Source," IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT), Harbin, China, 2022.
[11] Z. Zhang, R. Zhao*, S. Zhang, Y. Li, G. Fan and W. Zhu, "Design and Implementation of 10MHz-45GHz High Power Frequency Multiplier Filter Module," IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT), Harbin, China, 2022. (通讯作者).
[12] R. Zhao, X. Liu, S. Zhang, Y. Li, J. Yin and X. Duan, "Miniaturized IQ Modulation Module for Ka-Band Using Tunable Filter," International Conference on Microwave and Millimeter Wave Technology (ICMMT), Bejing, China, 2024.
[13] X. Liu, R. Zhao*, J. Zhao, B. Chen, H. Zhang and G. Shi, "Design of High-Power Microwave Combiner Based on PIN Diodes Technology," 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Bejing, China, 2024. (通讯作者).
[14] R. Zhao, T. Yao, X. Duan, G. Fan, S. Cheng and Y. Li, "Design of a 0.1~18GHz High-Power Broadband Noise Source," 2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Shanghai, China, 2020.
[15] X. Hao, R. Zhao, P. Li, B. Li and J. Ouyang, "Numerical Simulation on Microwave Transmission Properties of 1-D Periodic Super-Lattice Plasma Photonic Crystals With a Finite-Difference Time-Domain Method," IEEE Transactions on Plasma Science, vol. 47, no. 7, pp. 3168-3175, July 2019.
[16] X. He, K. Wei, S. Zhang, R. Zhao, J. Guo, K. Wang, X. Wang and X. Liu, " Optimization of the Ohmic Contact Performance with SiN partical interlayer for GaN HEMT," 12 th International Workshop on Nitride Semiconductors(IWN), Hawaii, USA, Jun. 2024.
[17] S. Xu, W. Li, W. Gong, R. Zhao*, WF. Gong and Y. Li, " Research on Multi-Phase DC-DC Voltage Regulator Module for Artificial Intelligence Servers, " Youth Academic Annual Conference of the Chinese Association of Automation (YAC2025), Zhengzhou, China, May. 2025. (通讯作者).
[18] 赵日康, 张宇，王荣刚，姜兆瑞. 基于高压 GaN 肖特基二极管的高功率微波限幅器设计与实现. 全国静电学术年会. 2025.
获奖情况：
[1] 应用于毫米波的宽带高增益低噪声放大器 第8届全国大学生集成电路创新创业大赛三等奖
主持/参与代表性科研项目：
[1] 国家自然科学基金青年项目(C类)，30万，在研，主持
[2] 山东省自然科学基金青年项目，在研，主持
[3] 企业横向“高频二极管噪声模型及噪声源模组开发”，35万，在研，主持
[4] 企业横向“海洋环境氮化镓限幅器可靠性研究”，5万，在研，主持
[5] xx3重点研发计划，2200万，在研，骨干参与
[6] xx6重点研发计划，2600万，结题，骨干参与
[7] 广东省重点研发计划 2019B10128001，结题，骨干参与
[8] 科技部重大专项 2016YFF0102102，结题，骨干参与
[9] …多项国家重点研发计划、xx3、xx6重点、预研、型号项目，结题，骨干参与
国家发明专利：
[1] 一种集成限幅阈值调控与能量回收功能的射频防护电路，CN202510976305.4
[2] 一种异质集成的快恢复响应型高功率限幅器及制备方法，CN202510976302.0
[3] 一种高频宽带的毫米波噪声源及其制备方法，CN2020109100963.2
[4] 一种限幅低噪声放大器一体化集成电路，CN202310308033.1
[5] 一种射频收发前端集成电路，CN202410314855.5
[6] 基于虚拟平台的RISC-V安全SoC验证和评估方法, CN202510607196.9
[7] 基于片上硬件的嵌入式程序完整性多粒度验证系统及方法, CN202510669412.2
学校及社会兼职：
《IEEE Transactions on Electron Devices》、《IEEE Microwave and Wireless Technology Letters》、《Microelectronics Journal》等期刊审稿人；IEEE Member；中国自动化学会会员；中国电子学会会员；《山东科技大学学报（自然科学版》青年编委。
欢迎热爱科学研究、有学术追求、有意向在射频微波、集成电路领域攻读硕士学位者报考；并可推荐北京理工大学、中国科学院微电子研究所、浙江大学、北京航空航天大学、电子科技大学等著名高校、中国电科，中国航天科工等著名研究院所攻读硕士/博士。
联系方式：zhaorikang@sdust.edu.cn；kangk@vip.163.com
