男，汉族，1992年2月生，山西太原人，中共党员，博士，讲师，硕士生导师，《山东科技大学学报（自然科学版》青年编委。招收电子、物理等相关专业研究生。
学习经历：
2021.9-2024.6 中国科学院微电子研究所 微电子学与固体电子学专业学习，获工学博士学位
工作经历：
2024.9-至今 山东科技大学 电子信息工程学院 集成电路系教师
2018.3-2021.7 中国电子科技集团第四十一研究所 研发三部/共性技术研究部 工程师
研究方向及成果：
主要从事射频微波器件与电路集成技术、化合物半导体材料与器件、微波毫米波电路设计、多功能微波模组开发及应用研究。在微电子、射频领域国际知名期刊、会议发表高水平论文20余篇(包括IEEE TMTT、IMS、TED、MWTL等论文9篇)，2024年在美国华盛顿受邀参加微波电路领域顶级会议IEEE IMS上做学术报告，发明专利3项；作为骨干参与国家自然科学基金、国家核高基项目、1xx重点项目近10项。
部分代表性论文：
[1] R. Zhao, D. Lu, X. Kang W. Wang, L. Wang, S. Wu, X. Tan, Y. Ye, Y. Kong, B. Jiao and X. Liu, “Limiter performance improvement through thermal management of GaN SBD combined microjet cooling with optimized substrate”, IEEE Transactions on Electron Devices, 2025, Early Access.
[2] R. Zhao, X. Kang, Y. Zheng, H. Wu, J. Gao, K. Wei and X. Liu., " Recovery Performance and Design Method for High-Power Microwave Limiter Using GaN-SBD Technology," IEEE Transactions on Microwave Theory and Techniques, 2023, doi 10.1109/TMTT.2024.3360246.
[3] X. Tan, Z. Ma, Y. Zhang and R. Zhao*. "A Compact Multifunctional Reconfigurable Coupler With Quadrature and Rat-Race Functions," IEEE Transactions on Microwave Theory and Techniques, 2024, doi:10.1109/TMTT.2024.3514149. (通讯作者).
[4] R. Zhao, et al., " Record Fast Recovery Performance from Microwave High-Power Limiters with All-GaN SBD-MMIC Technology: 39ns@100W," IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 434-437, doi: 10.1109/IMS40175.2024.10600444.
[5] R. Zhao, X. Kang, Y. Ying, H. Wu, N. Wei, S. Deng, K. Wei and X. Liu, " High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diode," IEEE Microwave and Wireless Technology Letters, vol. 3, pp. 208-211, 2022.
[6] R. Zhao, X. Kang, Y. Zheng, H. Wu, S. Deng, K. Wei and X. Liu, " High Power GaN SBD Limiter for Sub-6G with Fast Response and Recovery," IEEE Microwave and Wireless Technology Letters, vol. 34, no. 1, pp. 57-60, Jan. 2024.
[7] H. Wu, X. Kang, Y. Zheng, K. Wei. R.Zhao, et al., "Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer, " IEEE Transactions on Electron Devices, 2023, 70, 2, 402-408.
[8] G. Zhang, X. Kang, Y. Zheng, H. Wu. R.Zhao, "Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design," IEEE Transactions on Electron Devices, vol. 71, no. 12, pp. 7350-7357, Dec. 2024.
[9] S. Li, X. Xu, X. Kang, Y. Zhen, R. Zhao, et al., “High-Efficiency and High-Power Rectifiers Using Cost-effective AlGaN/GaN Schottky Diode with Accurate Large-Signal Parameter Extraction,” IEEE Microwave and Wireless Technology Letters. Jan. 2024.
[10] Zhao R, Z. Zhang, Y. Zhang, S. Zhang, X. Duan and Y. Li, "Design and Implementation of 50GHz-110GHz Ultra-Broadband Noise Source," IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT), Harbin, China, 2022.
[11] Z. Zhang, R. Zhao*, S. Zhang, Y. Li, G. Fan and W. Zhu, "Design and Implementation of 10MHz-45GHz High Power Frequency Multiplier Filter Module," IEEE International Conference on Microwave and Millimeter Wave Technology (ICMMT), Harbin, China, 2022. (通讯作者).
[12] R. Zhao, X. Liu, S. Zhang, Y. Li, J. Yin and X. Duan, "Miniaturized IQ Modulation Module for Ka-Band Using Tunable Filter," International Conference on Microwave and Millimeter Wave Technology (ICMMT), Bejing, China, 2024.
[13] X. Liu, R. Zhao*, J. Zhao, B. Chen, H. Zhang and G. Shi, "Design of High-Power Microwave Combiner Based on PIN Diodes Technology," 2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Bejing, China, 2024. (通讯作者).
[14] R. Zhao, T. Yao, X. Duan, G. Fan, S. Cheng and Y. Li, "Design of a 0.1~18GHz High-Power Broadband Noise Source," 2020 International Conference on Microwave and Millimeter Wave Technology (ICMMT), Shanghai, China, 2020.
[15] X. Hao, R. Zhao, P. Li, B. Li and J. Ouyang, "Numerical Simulation on Microwave Transmission Properties of 1-D Periodic Super-Lattice Plasma Photonic Crystals With a Finite-Difference Time-Domain Method," IEEE Transactions on Plasma Science, vol. 47, no. 7, pp. 3168-3175, July 2019.
获奖情况：
[1] 应用于毫米波的宽带高增益低噪声放大器 第8届全国大学生集成电路创新创业大赛三等奖
主要参与项目：
作为核心骨干参与多项国家级基金项目
[1] 科技部重大专项 2016YFF0102102
[2] 广东省重点研发计划 2019B10128001
[3] 多项1xx重点研发计划、预研、型号项目
国家发明专利：
[1] 一种高频宽带的毫米波噪声源及其制备方法，CN2020109100963.2
[2] 一种限幅底噪声放大器一体化集成电路，CN202310308033.1
[3] 一种射频收发前端集成电路，CN202410314855.5
学校及社会兼职：
《IEEE Transactions on Electron Devices》、《IEEE Microwave and Wireless Technology Letters》、《Microelectronics Journal》等期刊审稿人；IEEE Member；中国自动化学会会员；中国电子学会会员；《山东科技大学学报（自然科学版》青年编委。
欢迎热爱科学研究、有学术追求、有意向在射频微波、集成电路领域攻读硕士学位者报考；并可推荐中科院微电子所等著名高校攻读硕士/博士。
联系方式：zhaorikang@sdust.edu.cn；kangk@vip.163.com
